Widely Tunable 2.1 μm III-V-Silicon Hybrid Integrated Laser Based on a Single Microring Resonator
With the increasing demand for the detection of environmental and industrial gases, chip-scale laser sources operating in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2-2.5 \mu \mathrm{m}$</tex> wavelength range are attracting significant attention. [1]. Due to the complexity of gas components and discrete absorption lines, widely tunable laser sources are essential [2]. Over the past decade, considerable efforts have been made to miniaturize optical sensing and communication systems through integrated photonics technology [3]. Silicon photonic integrated circuits (SiPICs) offer high integration, density, and low cost due to silicon's high refractive index and complementary metal oxide semiconductor (CMOS) compatibility [4]. Therefore, the development of SiPIC-based semiconductor lasers is crucial for the field of gas sensing.
Authors
- Chengao Yang (ORCID: https://orcid.org/0000-0003-4426-6807)
- Siyuan Yu
- Ruijun Wang (ORCID: https://orcid.org/0000-0002-5045-3759)
- Zhichuan Niu (ORCID: https://orcid.org/0000-0002-9566-6635)
- Z. K. Geng (ORCID: https://orcid.org/0000-0002-3413-6614)
- Jincheng Wei (ORCID: https://orcid.org/0009-0006-1831-4528)
Institutions
- Sun Yat-sen University (CN)
- Institute of Semiconductors (CN)
Publication Details
- Published
- 2025-06-23
- DOI
- https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110164
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00