Advances in Deep Ultraviolet Semiconductor Laser: From Material Challenges to Device Performance
AlGaN-based deep ultraviolet (DUV) laser diodes (LDs) have garnered significant attention for a wide range of applications, including sterilization, sensing, and high-precision laser processing, owing to their compact size, high efficiency, and environmentally friendly properties. Despite these advantages, achieving practical device performance has been challenging due to the difficulty in realizing high-quality crystal growth and efficient carrier injection.
Authors
- Zhizhen Zhang (ORCID: https://orcid.org/0000-0002-4238-3447)
- Koji Aoto (ORCID: https://orcid.org/0009-0004-0165-9744)
- Hiroshi Amano
- Akira Yoshikawa (ORCID: https://orcid.org/0000-0002-1732-5202)
- Yoshio Honda (ORCID: https://orcid.org/0009-0003-3847-9408)
- Maki Kushimoto (ORCID: https://orcid.org/0000-0003-3974-7139)
- Chiaki Sasaoka (ORCID: https://orcid.org/0000-0002-0774-8666)
Institutions
- Nagoya Gakuin University (JP)
- Nagoya University (JP)
Publication Details
- Published
- 2025-06-23
- DOI
- https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110927
- Primary Topic
- Spectroscopy and Laser Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00