Ultrafast Laser-Induced Silicon Surface Modification: From Linear to Highly Nonlinear Excitation Regimes
The advent of high-power ultrafast lasers in the infrared and mid-infrared regimes is enabling the exploration of new excitation regimes in laser processing. In particular, for semiconductor materials and their transparency in the infrared domain of the spectrum, they facilitate the study of highly nonlinear regimes and the impact for novel modification possibilities, in a similar way to what has previously been achieved in dielectric materials using near-infrared ultrafast lasers.
Authors
- Noemí Casquero (ORCID: https://orcid.org/0000-0002-1194-6374)
- Pol Sopeña (ORCID: https://orcid.org/0000-0003-4112-3886)
- J. Solı́s (ORCID: https://orcid.org/0000-0002-4075-5016)
- Jan Siegel (ORCID: https://orcid.org/0000-0002-6159-7299)
- David Grojo (ORCID: https://orcid.org/0000-0002-8189-3781)
- O. Utéza
- Mario García-Lechuga (ORCID: https://orcid.org/0000-0002-9642-2982)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Aix-Marseille Université (FR)
- Instituto de Óptica "Daza de Valdés" (ES)
- Centrale Méditerranée (FR)
Publication Details
- Published
- 2025-06-23
- DOI
- https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110122
- Primary Topic
- Laser Material Processing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00