Nanosecond IR Laser-Assisted Selective 3D Etching of Silicon for Photovoltaics

Selective etching of laser-modified silicon (Si) enables 3D micro-sculpturing, offering new opportunities for photovoltaic (PV) applications. This technique facilitates high-aspect-ratio microstructures for light trapping in solar cells, photon management in photodetectors, and MEMS fabrication. We optimize selective wet-chemical etching of crystalline silicon (c-Si) modified by an infrared (IR) nanosecond (ns) laser, achieving high selectivity and controlled etching rates [1]. Additionally, we ensure complete removal of defected regions, producing a smooth, damage-free surface, crucial for PV applications requiring long carrier lifetimes.