Composition-Dependent Charge Carrier Dynamics in Bulk Mo_1-xW_xSe₂ Alloys

Transition metal dichalcogenides (TMD) are among the most widely used low dimensional materials in photonic and spintronic applications due to their exceptional optical properties. TMDs offer the advantage of tailoring their properties by mixing two or more elements to form TMD alloys, enabling diverse applications. Previously-reported research has primarily focused on monolayer TMDs with direct bandgaps and inversion symmetry breaking properties, which make them suitable for optical applications. In contrast, bulk TMDs have received less attention due to their indirect band gaps. Although potential applications of bulk TMDs in spintronic and valleytronic devices have been proposed [1], the material properties and charge carrier dynamics remain largely unexplored. To advance the development of novel bulk TMD devices, a better understanding of the correlation between band structures, ultrafast charge carrier dynamics, and material properties is essential.