Monolayer-Thick GaN/AlN Quantum Well Anodes and Far-UVC Field Emission Device at 226 nm

Far-UVC light sources in the spectral range of200-230 nm effectively kill bacteria and deactivate viruses while being not harmful to health, enabling persistent disinfection of air and surfaces in the presence of humans. So far only excimer lamps have been a unique viable solution in this narrow UV spectral range. Those light sources are commercially available but suffer from EMC compatibility issues and fundamental limitations on size-reduction potential. Far-UVC AlGaN light emitting diodes (LEDs) with wavelengths below 250 nm exhibit exponential collapse of external quantum efficiency (EQE) well below 1% [1]. Only recently, deep-UV LEDs with AlGaN/AlGaN quantum wells (QWs) with an emission at 226 nm were demonstrated with 0.28% EQE and 0.18% wall plug efficiency (WPE) [2], but the device lifetime is limited to ~10 h [2].

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Published
2025-06-23
DOI
https://doi.org/10.1109/cleo/europe-eqec65582.2025.11110195
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Monolayer-Thick GaN/AlN Quantum Well Anodes and Far-UVC Field Emission Device at 226 nm

Arno Hoogerwerf, Pierre Demolon, M. Marin, J.‐F. Carlin et al.
GaN-based semiconductor devices and materials
article

Monolayer-Thick GaN/AlN Quantum Well Anodes and Far-UVC Field Emission Device at 226 nm

Arno Hoogerwerf, Pierre Demolon, M. Marin, J.‐F. Carlin, N. Grandjean, D. L. Boïko, Peter Tønning, Emma Eriksson, M.-A. Dubois, Nicolas Volet, Emil Z. Ulsig, Kevin Bach Gravesen, Asger Brimnes Gardner, Johan Tingsborg
article en

Abstract

Far-UVC light sources in the spectral range of200-230 nm effectively kill bacteria and deactivate viruses while being not harmful to health, enabling persistent disinfection of air and surfaces in the presence of humans. So far only excimer lamps have been a unique viable solution in this narrow UV spectral range. Those light sources are commercially available but suffer from EMC compatibility issues and fundamental limitations on size-reduction potential. Far-UVC AlGaN light emitting diodes (LEDs) with wavelengths below 250 nm exhibit exponential collapse of external quantum efficiency (EQE) well below 1% [1]. Only recently, deep-UV LEDs with AlGaN/AlGaN quantum wells (QWs) with an emission at 226 nm were demonstrated with 0.28% EQE and 0.18% wall plug efficiency (WPE) [2], but the device lifetime is limited to ~10 h [2].

Swiss Center for Electronics and Microtechnology (Switzerland) (CH), X-Fab (Germany) (DE), APR Technologies (Sweden) (SE), École Polytechnique Fédérale de Lausanne (CH)
Affordable and clean energy
Openalex Percentile: Top 86%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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Monolayer-Thick GaN/AlN Quantum Well Anodes and Far-UVC Field Emission Device at 226 nm — Arno Hoogerwerf, Pierre Demolon, et al. · (2025) | TGRS Research Map | TGRS