Experimental Evidence of Intervalence Plasmons in Boron Doped Diamond
We combine electron energy loss spectroscopy, near-field infrared microscopy, and first principles calculations, to unveil a new mechanism for inducing plasmon-like behavior in doped semiconductors, due to electronic excitations between valence subbands.
Authors
- Souvik Bhattacharya (ORCID: https://orcid.org/0000-0002-8132-9937)
- R. Mohan Sankaran (ORCID: https://orcid.org/0000-0002-9399-4790)
- Giuseppe Strangi (ORCID: https://orcid.org/0000-0002-7509-2048)
- Sven Reichardt (ORCID: https://orcid.org/0000-0003-0764-838X)
- Nicolò Maccaferri (ORCID: https://orcid.org/0000-0002-0143-1510)
- Jonathan Boyd
- Valentin Allard (ORCID: https://orcid.org/0000-0003-4597-5189)
- Olga Shenderova (ORCID: https://orcid.org/0000-0002-1820-4285)
- Amir Hossein Talebi
- Aude L. Lereu (ORCID: https://orcid.org/0000-0001-7390-7832)
- Ludger Wirtz (ORCID: https://orcid.org/0000-0001-5618-3465)
Institutions
- Centre National de la Recherche Scientifique (FR)
- University of Illinois Urbana-Champaign (US)
- University of Luxembourg (LU)
- Institut Fresnel (FR)
- Centrale Méditerranée (FR)
- Adámas Nano (United States) (US)
- Case Western Reserve University (US)
- Umeå University (SE)
Publication Details
- Published
- 2025-06-23
- DOI
- https://doi.org/10.1109/cleo/europe-eqec65582.2025.11109392
- Primary Topic
- Diamond and Carbon-based Materials Research
- Type
- article
- Field-Weighted Citation Impact
- 0.00