A 180-nm CMOS Integrated Capacitance-to-Time Converter for Capacitive Sensing Applications

This article presents the implementation of a capacitance-to-time converter in standard 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text {m}$ </tex-math></inline-formula> CMOS technology. It is based on a square-wave relaxation oscillator that incorporates both pulsewidth modulation (PWM) and proportional to magnitude (PM) dependencies. The circuit is designed to interface with differential capacitance sensors but can also interface with single-capacitance sensors using a reference capacitor. It works with various capacitive values, ranging from a few nanofarads to less than one picofarad, considering different external <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{{0}}$ </tex-math></inline-formula> resistor values. Characterization tests proved that the fabricated chips exhibit the expected performance across the full range of use, achieving a sensitivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${207}~\mu $ </tex-math></inline-formula>s/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>pF in the differential mode (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${110}~ \mu $ </tex-math></inline-formula>s/pF in the single mode) and a resolution of 0.5 fF in the differential mode ((0.9 fF in the single mode). The circuit occupies a silicon area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${0.0044}~ \text {mm}^{2}$ </tex-math></inline-formula>, with a maximum power consumption of 1.5 mW. The circuit has also been successfully tested in real applications, such as measuring liquid levels in microfluidic applications. By using COTS level-meters, it achieved a sensitivity of 0.4 pF/mL with a resolution of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${100}~ \mu $ </tex-math></inline-formula>L. Measuring the dielectric constant in liquids was also demonstrated by using specifically designed 3-D-printed fluidic capacitance sensors.

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Publication Details

Journal
IEEE Sensors Journal
Published
2025-08-14
DOI
https://doi.org/10.1109/jsen.2025.3597027
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A 180-nm CMOS Integrated Capacitance-to-Time Converter for Capacitive Sensing Applications

C. Reig, Guido Di Patrizio Stanchieri, Gildas Léger, Orazio Aiello et al.
IEEE Sensors Journal
Analog and Mixed-Signal Circuit Design
article

A 180-nm CMOS Integrated Capacitance-to-Time Converter for Capacitive Sensing Applications

C. Reig, Guido Di Patrizio Stanchieri, Gildas Léger, Orazio Aiello, Andrea De Marcellis, Hala Y. Darweesh
article en

Abstract

This article presents the implementation of a capacitance-to-time converter in standard 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text {m}$ </tex-math></inline-formula> CMOS technology. It is based on a square-wave relaxation oscillator that incorporates both pulsewidth modulation (PWM) and proportional to magnitude (PM) dependencies. The circuit is designed to interface with differential capacitance sensors but can also interface with single-capacitance sensors using a reference capacitor. It works with various capacitive values, ranging from a few nanofarads to less than one picofarad, considering different external <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{{0}}$ </tex-math></inline-formula> resistor values. Characterization tests proved that the fabricated chips exhibit the expected performance across the full range of use, achieving a sensitivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${207}~\mu $ </tex-math></inline-formula>s/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta $ </tex-math></inline-formula>pF in the differential mode (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${110}~ \mu $ </tex-math></inline-formula>s/pF in the single mode) and a resolution of 0.5 fF in the differential mode ((0.9 fF in the single mode). The circuit occupies a silicon area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${0.0044}~ \text {mm}^{2}$ </tex-math></inline-formula>, with a maximum power consumption of 1.5 mW. The circuit has also been successfully tested in real applications, such as measuring liquid levels in microfluidic applications. By using COTS level-meters, it achieved a sensitivity of 0.4 pF/mL with a resolution of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${100}~ \mu $ </tex-math></inline-formula>L. Measuring the dielectric constant in liquids was also demonstrated by using specifically designed 3-D-printed fluidic capacitance sensors.

IEEE Sensors JournalVol. 25(19)
Universitat de València (ES), University of L'Aquila (IT), Instituto de Microelectrónica de Sevilla (ES), University of Genoa (IT)
Ministerio de Ciencia e Innovación
Affordable and clean energy
Openalex Percentile: Top 79%
Analog and Mixed-Signal Circuit Design
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