Monolithic GaN-based Optocoupler with Annular Interdigitated Microstructures
Commercial optocouplers have light emitting diodes (LEDs) and photodiodes (PDs) covered with optical encapsulant. However, this approach has vast device size and high optical loss. To address these issues, this study presents a GaN-based optocoupler chip. It has annular interdigitated microstructure to improve performance.
Authors
- Chengshiun Liou (ORCID: https://orcid.org/0000-0002-2377-7432)
- S. Wang (ORCID: https://orcid.org/0009-0006-6179-6307)
- Chingfu Tsou (ORCID: https://orcid.org/0000-0002-1466-9982)
- Huiqi Xie (ORCID: https://orcid.org/0009-0003-3116-1894)
- Pei C. Chiu (ORCID: https://orcid.org/0000-0003-2319-4496)
- Juin J. Liou (ORCID: https://orcid.org/0000-0002-5815-5078)
- Yuwei Chen (ORCID: https://orcid.org/0000-0003-0148-3609)
Institutions
- Feng Chia University (TW)
Publication Details
- Published
- 2025-07-13
- DOI
- https://doi.org/10.1109/omn65869.2025.11125989
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00