Unveiling Brass-Doped CoSb3-Based Thermoelectric Materials Using Solid-State Reaction

Skutterudite (CoSb<sub>3</sub>)-based thermoelectric materials are regarded as one of the most promising candidates for mid-temperature commercial thermoelectric applications, thanks to their excellent electrical performance and alloy-based attributes. By utilizing techniques such as doping, microstructure design, and high-temperature solid-state reactions, synthesis of Brass<sub>x</sub>/Co<sub>4</sub>Sb<sub>11.5</sub>Te<sub>0.5</sub> (x = 0.1, 0.3, 0.5, 0.7, representing wt%) in composite form can be rapidly achieved. XRD analysis indicates that the prepared Brass<sub>x</sub>/Co<sub>4</sub>Sb<sub>11.5</sub>Te<sub>0.5</sub> samples primarily exhibit the CoSb<sub>3</sub> crystal structure, with the formation of minor impurity phases such as Cu<sub>13</sub>Te<sub>7</sub> and ZnTe. SEM and EDS analyses reveal that the sample is composed of nanoscale equiaxed grains, some of which are micrometer in size, with a large number of microporous structures distributed uniformly, forming abundant grain boundaries. By co-doping with brass and tellurium (Te), the carrier concentration can be effectively regulated, thereby enhancing the power factor of CoSb<sub>3</sub>-based thermoelectric materials. Meanwhile, the introduction of nanostructures, grain boundaries, and defects optimizes the microstructure of the samples, leading to a reduction in the lattice thermal conductivity of the CoSb<sub>3</sub>-based thermoelectric materials. At a testing temperature of 781 K, Brass<sub>0.1</sub>/Co<sub>4</sub>Sb<sub>11.5</sub>Te<sub>0.5</sub> achieved a maximum power factor of 1.86 mW·m<sup>-1</sup>·K<sup>-2</sup>, a minimum lattice thermal conductivity of 1.02 W/(mK), and a maximum thermoelectric figure of merit <i>ZT</i> of 0.81.

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Journal
Materials
Published
2025-08-22
DOI
https://doi.org/10.3390/ma18173928
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Unveiling Brass-Doped CoSb3-Based Thermoelectric Materials Using Solid-State Reaction

Xiaodong Lv, Run Huang, Jiaxin Fan, Bingke Qin et al.
Materials
Advanced Thermoelectric Materials and Devices
article

Unveiling Brass-Doped CoSb3-Based Thermoelectric Materials Using Solid-State Reaction

Xiaodong Lv, Run Huang, Jiaxin Fan, Bingke Qin, Dan Zhao, Yonghua Ji
article en

Abstract

Skutterudite (CoSb<sub>3</sub>)-based thermoelectric materials are regarded as one of the most promising candidates for mid-temperature commercial thermoelectric applications, thanks to their excellent electrical performance and alloy-based attributes. By utilizing techniques such as doping, microstructure design, and high-temperature solid-state reactions, synthesis of Brass<sub>x</sub>/Co<sub>4</sub>Sb<sub>11.5</sub>Te<sub>0.5</sub> (x = 0.1, 0.3, 0.5, 0.7, representing wt%) in composite form can be rapidly achieved. XRD analysis indicates that the prepared Brass<sub>x</sub>/Co<sub>4</sub>Sb<sub>11.5</sub>Te<sub>0.5</sub> samples primarily exhibit the CoSb<sub>3</sub> crystal structure, with the formation of minor impurity phases such as Cu<sub>13</sub>Te<sub>7</sub> and ZnTe. SEM and EDS analyses reveal that the sample is composed of nanoscale equiaxed grains, some of which are micrometer in size, with a large number of microporous structures distributed uniformly, forming abundant grain boundaries. By co-doping with brass and tellurium (Te), the carrier concentration can be effectively regulated, thereby enhancing the power factor of CoSb<sub>3</sub>-based thermoelectric materials. Meanwhile, the introduction of nanostructures, grain boundaries, and defects optimizes the microstructure of the samples, leading to a reduction in the lattice thermal conductivity of the CoSb<sub>3</sub>-based thermoelectric materials. At a testing temperature of 781 K, Brass<sub>0.1</sub>/Co<sub>4</sub>Sb<sub>11.5</sub>Te<sub>0.5</sub> achieved a maximum power factor of 1.86 mW·m<sup>-1</sup>·K<sup>-2</sup>, a minimum lattice thermal conductivity of 1.02 W/(mK), and a maximum thermoelectric figure of merit <i>ZT</i> of 0.81.

MaterialsVol. 18(17)
Guizhou University (CN), China University of Mining and Technology (CN), Liupanshui Normal University (CN)
Liupanshui Normal University
Openalex Percentile: Top 84%
Advanced Thermoelectric Materials and Devices
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