Atmospheric-pressure plasma-induced formation of heterostructured thick silicon films toward high energy density lithium-ion battery anodes

Abstract The significant volume expansion of silicon (Si) anodes during lithiation and delithiation cycles in lithium-ion batteries (LIBs) is a serious issue for their mechanical stability and long-term performance. Incorporating controlled voids and defects into the Si has emerged as a promising strategy to mitigate mechanical degradation during cycling. This study investigates the formation of highly defective, heterostructured Si thick films using atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition (PECVD) driven by very-high-frequency (VHF) electric power. Structural and electrochemical analyses demonstrate that the resulting heterostructured Si anodes exhibit suppressed volumetric expansion and deliver an impressive initial volumetric capacity of 4217 mA h cm −3 . Our findings highlight the potential of the AP-PECVD process as a viable technique for producing high-performance Si anodes for future LIBs technologies.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2025-08-22
DOI
https://doi.org/10.1088/1361-6463/adfe7c
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
0.00

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article

Atmospheric-pressure plasma-induced formation of heterostructured thick silicon films toward high energy density lithium-ion battery anodes

Kunio Hiromoto, Hiroaki Kakiuchi, Farrel Dzaudan Naufal, Hiromasa Ohmi et al.
1 links
Journal of Physics D Applied Physics
ZnO doping and properties
article

Atmospheric-pressure plasma-induced formation of heterostructured thick silicon films toward high energy density lithium-ion battery anodes

Kunio Hiromoto, Hiroaki Kakiuchi, Farrel Dzaudan Naufal, Hiromasa Ohmi, Afif Hamzens
article en

Abstract

Abstract The significant volume expansion of silicon (Si) anodes during lithiation and delithiation cycles in lithium-ion batteries (LIBs) is a serious issue for their mechanical stability and long-term performance. Incorporating controlled voids and defects into the Si has emerged as a promising strategy to mitigate mechanical degradation during cycling. This study investigates the formation of highly defective, heterostructured Si thick films using atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition (PECVD) driven by very-high-frequency (VHF) electric power. Structural and electrochemical analyses demonstrate that the resulting heterostructured Si anodes exhibit suppressed volumetric expansion and deliver an impressive initial volumetric capacity of 4217 mA h cm −3 . Our findings highlight the potential of the AP-PECVD process as a viable technique for producing high-performance Si anodes for future LIBs technologies.

Journal of Physics D Applied PhysicsVol. 58(38)
The University of Osaka (JP)
Ministry of Education, Culture, Sports, Science and Technology, Iwatani Naoji Foundation
Openalex Percentile: Top 84%
ZnO doping and properties
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