All-electrical ferromagnet-free spin injection, detection, and manipulation at room temperature

Abstract Improving the energy efficiency and operational speed is challenging in realizing integrated circuits. The spin parameter has been proposed as a practicable ideal means to address this hurdle by developing a spin field-effect transistor (spin FET). However, the need for magnetic or optical components in 2DEGs at low temperatures hinders the approach to a practicable spin-based integrated circuit. Here, we propose a novel all-electric spin FET in the heterostructures of graphene and T d −WTe 2 by employing alternative spin polarizers with transition metal dichalcogenides (TMDCs). Furthermore, we demonstrate all-electrical AND spin logic gate operations using two input gates to control the output spin Hall signal at room temperature. This novel approach demonstrates the intrinsic properties of graphene and type-II Weyl semimetal T d −WTe 2 induced in the graphene heterostructure, enabling spin FET operation at room temperature. Our work presents a novel perspective on engineering state-of-the-art logic circuits for spin-based, energy-efficient, and fast data processing in graphene/TMDC heterostructures.