Electron beam irradiation-induced transport and recombination in p-type gallium oxide grown on (001) <i>β</i>-Ga2O3 substrate
This study investigates minority electron diffusion length and carrier recombination phenomena in p-type 300 nm-thick Ga2O3 films homoepitaxially grown over a (001) tin-doped β-Ga2O3 conductive substrate. This research is novel due to its systematic and near-simultaneous measurements in the top layer of a p-Ga2O3/n-Ga2O3 structure using independent electron beam-induced current and cathodoluminescence techniques. Previous work primarily focused on heteroepitaxial architectures or gallium oxide grown over insulating substrates of the same material. In this work, the activation energies related to point defects in gallium oxide were extracted from temperature-dependent incremental electron beam irradiation experiments to gain insight into the defect landscape and its influence on minority carrier transport and recombination dynamics.
Authors
- Jian-Sian Li (ORCID: https://orcid.org/0000-0002-2817-7612)
- Chao-Ching Chiang (ORCID: https://orcid.org/0000-0002-0447-8170)
- A. Ruzin (ORCID: https://orcid.org/0000-0003-3868-3903)
- E. Chikoidze (ORCID: https://orcid.org/0000-0002-6566-4639)
- Leonid Chernyak (ORCID: https://orcid.org/0000-0001-7737-0251)
- Corinne Sartel
- S. J. Pearton (ORCID: https://orcid.org/0000-0001-6498-1256)
- Yves Dumont (ORCID: https://orcid.org/0000-0002-0739-428X)
- Alfons Schulte (ORCID: https://orcid.org/0000-0003-0824-8572)
- Zeyu Chi (ORCID: https://orcid.org/0000-0003-1391-527X)
- F. Ren (ORCID: https://orcid.org/0000-0001-9234-019X)
- Gabriel Marciaga (ORCID: https://orcid.org/0009-0001-8057-4607)
Institutions
- University of Central Florida (US)
- Centre National de la Recherche Scientifique (FR)
- Tel Aviv University (IL)
- Université de Versailles Saint-Quentin-en-Yvelines (FR)
- Université Paris-Saclay (FR)
- University of Florida (US)
- Groupe d’Étude de la Matière Condensée (FR)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1063/5.0288118
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- U.S. Department of Defense
- North Atlantic Treaty Organization
- United States - Israel Binational Science Foundation
- Agence Nationale de la Recherche
- Division of Electrical, Communications and Cyber Systems