Simulation of gamma graphyne nanoribbon transistor

In this research, the electronic properties of gamma graphyne nanoribbons have been investigated and a nano-transistor has been designed and simulated based on it.Density functional theory method and non-equilibrium Green's function have been used in calculations with the help of Quantum ATK calculation package.The results obtained from the band structure and density of states electronic indicate the quasi-metallic behavior and semi-conductivity of nanoribbons based on the shape of their edges.The field effect transistor with a gamma armchair handle nano channel has been designed and its characteristic curves have been obtained.The results show that the current of this transistor is much higher compared to the graphene transistor.The simulations show that the current in the gamma graphene transistor is well controlled by the gate voltage.