Connection Mode and Comparative Analysis of Crimped Power Devices
Crimped power devices play an important role in electrical engineering such as high voltage transmission and power conversion, and the reliability of the devices has a great relationship with the actual production. The insulated gate bipolar transistor (IGBT) and thyristor have different functions and advantages in high voltage power transmission engineering, and their internal connection mode is closely related to the use scenario of the device. This paper introduces the new silver sintering technology of crimped IGBT, the low temperature and high pressure welding technology of thyristor and the aluminum base solder of thyristor core from the connection mode of crimped power device, and makes a comparative analysis of several connection modes.
Authors
- Shuhuai Shi
- Chaofeng Zhang (ORCID: https://orcid.org/0000-0001-6188-6886)
- Dawei Xia (ORCID: https://orcid.org/0009-0000-6337-4905)
- Du Junli
Institutions
- Electric Power Research Institute (US)
Publication Details
- Published
- 2024-12-06
- DOI
- https://doi.org/10.1109/iaecst64597.2024.11118142
- Primary Topic
- Power Systems and Renewable Energy
- Type
- article
- Field-Weighted Citation Impact
- 0.00