Rapid one-step mechanochemical synthesis of ternary semiconductor AgSbS2 for photovoltaic applications

Abstract Ternary AgSbS 2 semiconductor was prepared by one-step mechanochemical synthesis using a planetary ball mill from elemental silver, antimony, and sulfur after 30 min of milling. The cubic AgSbS 2 with an approximate crystallite size of 56 nm was successfully produced, as confirmed by the Rietveld refinement. The Raman spectrum confirmed the formation of pure AgSbS 2 . Morphology characterization using SEM demonstrated the homogeneity of the prepared AgSbS 2 . UV–Vis spectroscopy showed the suitability of the prepared AgSbS 2 for photovoltaic applications, as the optical band gap energy value of 1.67 eV and 1.68 eV was determined from absorbance and transmission measurements for AgSbS 2 powder and AgSbS 2 thin film, respectively. Photoresponse of AgSbS 2 was verified by photocurrent spectroscopy as well as I–V measurements. The photoresponsive current showed 2.3 times increase at 1 V for AgSbS 2 powder and 1.6 times increase for AgSbS 2 thin film under illumination compared to the current in the dark state. To verify the photoelectric properties for photovoltaic application Si/AgSbS 2 diodes were prepared by depositing a thin AgSbS 2 film from the AgSbS 2 powder on n- Si substrate. The I–V characteristics of diodes show a relatively good rectification effect and sensitivity to illumination in spectral range 500–1100 nm.

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Publication Details

Journal
Journal of Materials Science
Published
2025-08-15
DOI
https://doi.org/10.1007/s10853-025-11266-x
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73

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article

Rapid one-step mechanochemical synthesis of ternary semiconductor AgSbS2 for photovoltaic applications

Zdenka Lukáčová Bujňáková, Soňa Kováčová, Matej Bereš, Maximilian Wohlgemuth et al.
1 citations
Journal of Materials Science
Chalcogenide Semiconductor Thin Films
0.73
article

Rapid one-step mechanochemical synthesis of ternary semiconductor AgSbS2 for photovoltaic applications

Zdenka Lukáčová Bujňáková, Soňa Kováčová, Matej Bereš, Maximilian Wohlgemuth, Erika Dutková, Lenka Findoráková, M.J. Sayagués, Matěj Baláž, Marián Marton, Patrik Jacko, Jaroslav Kováč
article en
1 citations

Abstract

Abstract Ternary AgSbS 2 semiconductor was prepared by one-step mechanochemical synthesis using a planetary ball mill from elemental silver, antimony, and sulfur after 30 min of milling. The cubic AgSbS 2 with an approximate crystallite size of 56 nm was successfully produced, as confirmed by the Rietveld refinement. The Raman spectrum confirmed the formation of pure AgSbS 2 . Morphology characterization using SEM demonstrated the homogeneity of the prepared AgSbS 2 . UV–Vis spectroscopy showed the suitability of the prepared AgSbS 2 for photovoltaic applications, as the optical band gap energy value of 1.67 eV and 1.68 eV was determined from absorbance and transmission measurements for AgSbS 2 powder and AgSbS 2 thin film, respectively. Photoresponse of AgSbS 2 was verified by photocurrent spectroscopy as well as I–V measurements. The photoresponsive current showed 2.3 times increase at 1 V for AgSbS 2 powder and 1.6 times increase for AgSbS 2 thin film under illumination compared to the current in the dark state. To verify the photoelectric properties for photovoltaic application Si/AgSbS 2 diodes were prepared by depositing a thin AgSbS 2 film from the AgSbS 2 powder on n- Si substrate. The I–V characteristics of diodes show a relatively good rectification effect and sensitivity to illumination in spectral range 500–1100 nm.

Journal of Materials ScienceVol. 60(33)
Slovak University of Technology in Bratislava (SK), Technical University of Košice (SK), Slovak Academy of Sciences (SK), Instituto de Ciencia de Materiales de Sevilla (ES), Institute of Geotechnics of the Slovak Academy of Sciences (SK), Ruhr University Bochum (DE)
Slovenská Akadémia Vied, Ministerstvo školstva, vedy, výskumu a športu Slovenskej republiky, Vedecká Grantová Agentúra MŠVVaŠ SR a SAV
Openalex Percentile: Top 24%
Chalcogenide Semiconductor Thin Films
0.73
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