Boosting Efficiency of Hydrothermally Grown Sb <sub>2</sub> S <sub>3</sub> Solar Cells via Rational Sulfur Engineering

Abstract A high‐quality absorber layer is crucial for enhancing the performance of emerging photovoltaic devices, such as antimony sulfide (Sb 2 S 3 ) solar cells, especially for the regulation of their composition and defects. However, traditional sulfur sources (supplying only S 2− ) and annealing‐induced sulfur volatilization in hydrothermally grown Sb 2 S 3 solar cells cause sulfur deficiency, severe defects, and low power conversion efficiencies (PCEs). Here, sodium tetrathionate (Na 2 S 4 O 6 ) is introduced as a rationally designed sulfur‐engineering additive, enhancing precursor solution stability via strong coordination and enabling in situ sulfurization in the annealing process. During hydrothermal growth, Na 2 S 4 O 6 slowly releases elemental sulfur, forming Sb 2 S 3x ( x &gt; 1) as‐prepared films that self‐optimize S/Sb stoichiometry during annealing. This strategy elevates the deposition rate, boosts absorber compactness, and reduces defect density. The optimized devices achieve a PCE of 8.03% (certified 7.78%) under AM 1.5G illumination and an indoor PCE of 18.36% (1000 lux LED), representing the highest certified PCE for pure Sb 2 S 3 solar cells to date. By decoupling sulfur supply from traditional sulfide sources, this work establishes Na 2 S 4 O 6 as a versatile additive for hydrothermal synthesis of metal sulfide photovoltaics, offering a blueprint for precursor solution design in hydrothermal‐processed thin‐film devices.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-08-21
DOI
https://doi.org/10.1002/adfm.202518624
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19

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article

Boosting Efficiency of Hydrothermally Grown Sb 2 S 3 Solar Cells via Rational Sulfur Engineering

Y.‐Z. Yin, Feng Lin, Yuqian Huang, Liming Fang et al.
3 citations
Advanced Functional Materials
Chalcogenide Semiconductor Thin Films
2.19
article

Boosting Efficiency of Hydrothermally Grown Sb 2 S 3 Solar Cells via Rational Sulfur Engineering

Y.‐Z. Yin, Feng Lin, Yuqian Huang, Liming Fang, Lei Bao, Hongling Guo, Tao Chen, Gang Wang, Yi Zhang, Haolin Wang, Jiangfeng Liu, Zhen Yu, Junjie Yang, Youchao Tu
article en
3 citations

Abstract

Abstract A high‐quality absorber layer is crucial for enhancing the performance of emerging photovoltaic devices, such as antimony sulfide (Sb 2 S 3 ) solar cells, especially for the regulation of their composition and defects. However, traditional sulfur sources (supplying only S 2− ) and annealing‐induced sulfur volatilization in hydrothermally grown Sb 2 S 3 solar cells cause sulfur deficiency, severe defects, and low power conversion efficiencies (PCEs). Here, sodium tetrathionate (Na 2 S 4 O 6 ) is introduced as a rationally designed sulfur‐engineering additive, enhancing precursor solution stability via strong coordination and enabling in situ sulfurization in the annealing process. During hydrothermal growth, Na 2 S 4 O 6 slowly releases elemental sulfur, forming Sb 2 S 3x ( x &gt; 1) as‐prepared films that self‐optimize S/Sb stoichiometry during annealing. This strategy elevates the deposition rate, boosts absorber compactness, and reduces defect density. The optimized devices achieve a PCE of 8.03% (certified 7.78%) under AM 1.5G illumination and an indoor PCE of 18.36% (1000 lux LED), representing the highest certified PCE for pure Sb 2 S 3 solar cells to date. By decoupling sulfur supply from traditional sulfide sources, this work establishes Na 2 S 4 O 6 as a versatile additive for hydrothermal synthesis of metal sulfide photovoltaics, offering a blueprint for precursor solution design in hydrothermal‐processed thin‐film devices.

Advanced Functional MaterialsVol. 36(9)
Xinyang Normal University (CN), Tianjin University of Technology (CN), Nankai University (CN), Hefei National Center for Physical Sciences at Nanoscale (CN), Geological Exploration Technology Institute of Jiangsu Province (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 11%
Chalcogenide Semiconductor Thin Films
2.19
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