Boosting Efficiency of Hydrothermally Grown Sb <sub>2</sub> S <sub>3</sub> Solar Cells via Rational Sulfur Engineering
Abstract A high‐quality absorber layer is crucial for enhancing the performance of emerging photovoltaic devices, such as antimony sulfide (Sb 2 S 3 ) solar cells, especially for the regulation of their composition and defects. However, traditional sulfur sources (supplying only S 2− ) and annealing‐induced sulfur volatilization in hydrothermally grown Sb 2 S 3 solar cells cause sulfur deficiency, severe defects, and low power conversion efficiencies (PCEs). Here, sodium tetrathionate (Na 2 S 4 O 6 ) is introduced as a rationally designed sulfur‐engineering additive, enhancing precursor solution stability via strong coordination and enabling in situ sulfurization in the annealing process. During hydrothermal growth, Na 2 S 4 O 6 slowly releases elemental sulfur, forming Sb 2 S 3x ( x > 1) as‐prepared films that self‐optimize S/Sb stoichiometry during annealing. This strategy elevates the deposition rate, boosts absorber compactness, and reduces defect density. The optimized devices achieve a PCE of 8.03% (certified 7.78%) under AM 1.5G illumination and an indoor PCE of 18.36% (1000 lux LED), representing the highest certified PCE for pure Sb 2 S 3 solar cells to date. By decoupling sulfur supply from traditional sulfide sources, this work establishes Na 2 S 4 O 6 as a versatile additive for hydrothermal synthesis of metal sulfide photovoltaics, offering a blueprint for precursor solution design in hydrothermal‐processed thin‐film devices.
Authors
- Y.‐Z. Yin (ORCID: https://orcid.org/0000-0002-7870-4396)
- Feng Lin (ORCID: https://orcid.org/0000-0001-8941-7010)
- Yuqian Huang (ORCID: https://orcid.org/0000-0002-9319-0805)
- Liming Fang (ORCID: https://orcid.org/0000-0003-4263-8478)
- Lei Bao (ORCID: https://orcid.org/0000-0002-8243-2872)
- Hongling Guo
- Tao Chen (ORCID: https://orcid.org/0000-0002-3483-8341)
- Gang Wang (ORCID: https://orcid.org/0009-0000-0228-0120)
- Yi Zhang (ORCID: https://orcid.org/0000-0001-9083-0611)
- Haolin Wang (ORCID: https://orcid.org/0000-0001-8783-3782)
- Jiangfeng Liu (ORCID: https://orcid.org/0000-0003-3920-1056)
- Zhen Yu (ORCID: https://orcid.org/0000-0001-6747-1809)
- Junjie Yang
- Youchao Tu
Institutions
- Xinyang Normal University (CN)
- Tianjin University of Technology (CN)
- Nankai University (CN)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
- Geological Exploration Technology Institute of Jiangsu Province (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-08-21
- DOI
- https://doi.org/10.1002/adfm.202518624
- Citations
- 3
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- National Natural Science Foundation of China