UV-C Light Detection in Aluminum Gallium Oxide Metal–Semiconductor–Metal Photodetectors

In this work, we fabricated aluminum gallium oxide (AGO) metal-semiconductor-metal photodetectors (PDs) with different RF powers of GaO target (P Ga ), and their characteristics were investigated and discussed.At P Ga below 160 W, the PDs exhibited high resistance across the whole range of wavelengths.When P Ga increases to 160 W or higher, both the response and rejection ratio improve significantly.The optimal photoresponse occurs when the DC power of Al is 80 W and P Ga is 180 W, with the rejection ratio about 10 5 , the responsivity 0.2 mA/W, the rise time less than 1 s, and the decay time less than 0.1 s.Additionally, the optimal AGO PDs have high stability and repeatability demonstrated in the time-resolved response.