Rare-earth nitrides: fundamental advances and applications in cryogenic electronics
Abstract Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field, focusing on advances in thin film growth, the understanding of the magnetism and electronic structure, and developments which enable applications in cryogenic electronic devices.
Authors
- B. J. Ruck (ORCID: https://orcid.org/0000-0002-3719-7375)
- Simon Granville (ORCID: https://orcid.org/0000-0001-9926-4628)
- J. D. Miller (ORCID: https://orcid.org/0000-0003-3095-6057)
- Halima Giovanna Ahmad (ORCID: https://orcid.org/0000-0003-2627-2496)
- W. F. Holmes-Hewett (ORCID: https://orcid.org/0000-0002-3437-4727)
Institutions
- Victoria University of Wellington (NZ)
- Istituto Nazionale di Fisica Nucleare, Sezione di Napoli (IT)
- University of Naples Federico II (IT)
- MacDiarmid Institute for Advanced Materials and Nanotechnology (NZ)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-08-21
- DOI
- https://doi.org/10.1088/1361-6463/adf1b2
- Citations
- 6
- Primary Topic
- Physics of Superconductivity and Magnetism
- Type
- article
- Field-Weighted Citation Impact
- 7.55
Funders
- Victoria University of Wellington
- Victoria University
- Ministry of Business, Innovation and Employment
- MacDiarmid Institute for Advanced Materials and Nanotechnology