Highly Selective and Sensitive Resistive and Schottky Diode Sensor for Nitrogen-Containing Gas Based on Monolayer Penta-HgO<sub>2</sub>

Highly sensitive and reusable sensors for detecting harmful gas molecules are particularly important to reduce their harmful impacts on human health and the natural environment. Based on the density functional theory calculations, the adsorption properties and sensing performances of the monolayer penta-HgO<sub>2</sub> material for nitrogen-containing toxic gas molecules (N<sub>2</sub>O, NH<sub>3</sub>, NO<sub>2</sub>, and NO) were thoroughly explored. The adsorptions of NH<sub>3</sub>, NO<sub>2</sub>, and NO (N<sub>2</sub>O) on the monolayer penta-HgO<sub>2</sub> substrate are characterized by high (low) adsorption energy, significant (little) charge transfer, and short (long) adsorption distance, showing chemisorption (physisorption) properties. In addition, the band gap of penta-HgO<sub>2</sub> decreases significantly after adsorbing NO<sub>2</sub> and NO, resulting in a substantial increase in electrical conductivity. Meanwhile, due to the adsorption of NO, the substrate also generates an obvious magnetic moment. In this study, an efficient strategy to predict the direction and extent of charge transfer between the absorbed gas and substrate material is put forward by comparing the Fermi level and band edge positions of the adsorbent to the frontier molecular orbitals of the adsorbate. Furthermore, we propose a highly efficient resistive gas sensor based on the penta-HgO<sub>2</sub> monolayer material for detecting NO<sub>2</sub> and NO due to the obvious variations of the electronic structure and resultant prominent changes in the conductivity. Particularly, a Schottky diode sensor by fabricating a contacted interface between the penta-HgO<sub>2</sub> monolayer and an Ag metal is designed according to the significantly changed work functions. The types and barrier heights of the metal-semiconductor contact (Ag-HgO<sub>2</sub>) are modulated by the adsorption of NO<sub>2</sub> or NO. Different current signals can be observed when a bias voltage of 0.4 eV is applied, enabling the selective identification of NO<sub>2</sub> and NO. Additionally, the short recovery time after adsorbing NO<sub>2</sub> and NO demonstrates the reusability of the sensor. The theoretical results of this study provide valuable insights for accelerating the discovery of potential sensing materials and promote innovative resistive sensors or Schottky diode sensors based on the pentagonal monolayer material for detecting nitrogen-containing gases.

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Journal
Langmuir
Published
2025-08-20
DOI
https://doi.org/10.1021/acs.langmuir.5c02929
Primary Topic
Gas Sensing Nanomaterials and Sensors
Type
article
Field-Weighted Citation Impact
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article

Highly Selective and Sensitive Resistive and Schottky Diode Sensor for Nitrogen-Containing Gas Based on Monolayer Penta-HgO2

Xinyu Song, Bowen Chen, Xinyi Li, Wen Lei et al.
Langmuir
Gas Sensing Nanomaterials and Sensors
article

Highly Selective and Sensitive Resistive and Schottky Diode Sensor for Nitrogen-Containing Gas Based on Monolayer Penta-HgO2

Xinyu Song, Bowen Chen, Xinyi Li, Wen Lei, Xing Ming, Jinpeng Wang, Ke Peng
article en

Abstract

Highly sensitive and reusable sensors for detecting harmful gas molecules are particularly important to reduce their harmful impacts on human health and the natural environment. Based on the density functional theory calculations, the adsorption properties and sensing performances of the monolayer penta-HgO<sub>2</sub> material for nitrogen-containing toxic gas molecules (N<sub>2</sub>O, NH<sub>3</sub>, NO<sub>2</sub>, and NO) were thoroughly explored. The adsorptions of NH<sub>3</sub>, NO<sub>2</sub>, and NO (N<sub>2</sub>O) on the monolayer penta-HgO<sub>2</sub> substrate are characterized by high (low) adsorption energy, significant (little) charge transfer, and short (long) adsorption distance, showing chemisorption (physisorption) properties. In addition, the band gap of penta-HgO<sub>2</sub> decreases significantly after adsorbing NO<sub>2</sub> and NO, resulting in a substantial increase in electrical conductivity. Meanwhile, due to the adsorption of NO, the substrate also generates an obvious magnetic moment. In this study, an efficient strategy to predict the direction and extent of charge transfer between the absorbed gas and substrate material is put forward by comparing the Fermi level and band edge positions of the adsorbent to the frontier molecular orbitals of the adsorbate. Furthermore, we propose a highly efficient resistive gas sensor based on the penta-HgO<sub>2</sub> monolayer material for detecting NO<sub>2</sub> and NO due to the obvious variations of the electronic structure and resultant prominent changes in the conductivity. Particularly, a Schottky diode sensor by fabricating a contacted interface between the penta-HgO<sub>2</sub> monolayer and an Ag metal is designed according to the significantly changed work functions. The types and barrier heights of the metal-semiconductor contact (Ag-HgO<sub>2</sub>) are modulated by the adsorption of NO<sub>2</sub> or NO. Different current signals can be observed when a bias voltage of 0.4 eV is applied, enabling the selective identification of NO<sub>2</sub> and NO. Additionally, the short recovery time after adsorbing NO<sub>2</sub> and NO demonstrates the reusability of the sensor. The theoretical results of this study provide valuable insights for accelerating the discovery of potential sensing materials and promote innovative resistive sensors or Schottky diode sensors based on the pentagonal monolayer material for detecting nitrogen-containing gases.

LangmuirVol. 41(34)
Guilin University of Technology (CN), Guangxi Zhuang Autonomous Region Department of Education (CN), Advanced Materials and Devices (United States) (US)
National Natural Science Foundation of China, Guangxi Key Research and Development Program
Openalex Percentile: Top 80%
Gas Sensing Nanomaterials and Sensors
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