Improving the interfacial thermal conductance between Cr–Ni alloy and dielectric by a metal interlayer

As the size of transistors in electronic devices continues to shrink and power density increases, the effective thermal management has become essential. The interfacial thermal resistance now represents a key bottleneck in further miniaturizing and powering high-performance electronic products. In this study, we used the differential 3ω method to investigate the effects of different metal interlayers on the interfacial thermal conductance of the Cr0.22Ni0.78/Al2O3 interface. Specifically, a Cu interlayer of 17 nm or a Cr interlayer of 5 nm doubled the interfacial thermal conductance (ITC) compared to that of the pure Cr0.22Ni0.78/Al2O3 interface. In contrast, the Au interlayer reduces the ITC of the Cr0.22Ni0.78/Al2O3 interface. Furthermore, the phonon spectral analysis revealed that the Cu or Cr interlayer acts as a phonon bridge, alleviating the phonon mismatch between the Cr0.22Ni0.78 and Al2O3 layers. This study advances the understanding of the interlayer effects on the ITC of Cr0.22Ni0.78/Al2O3 interface and provides valuable guidance for improving the ITC between metal and dielectric materials in electronic applications.

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Publication Details

Journal
Applied Physics Letters
Published
2025-08-18
DOI
https://doi.org/10.1063/5.0276380
Citations
2
Primary Topic
Thermal properties of materials
Type
article
Field-Weighted Citation Impact
1.04

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article

Improving the interfacial thermal conductance between Cr–Ni alloy and dielectric by a metal interlayer

Yunshan Zhao, Meilin Li, Dengke Ma, Yu Yang et al.
2 citations
Applied Physics Letters
Thermal properties of materials
1.04
article

Improving the interfacial thermal conductance between Cr–Ni alloy and dielectric by a metal interlayer

Yunshan Zhao, Meilin Li, Dengke Ma, Yu Yang, Hui Nan Guo, Lifa Zhang, Yingqi Wang, Zehao Yu, Zhuo Ju
article en
2 citations

Abstract

As the size of transistors in electronic devices continues to shrink and power density increases, the effective thermal management has become essential. The interfacial thermal resistance now represents a key bottleneck in further miniaturizing and powering high-performance electronic products. In this study, we used the differential 3ω method to investigate the effects of different metal interlayers on the interfacial thermal conductance of the Cr0.22Ni0.78/Al2O3 interface. Specifically, a Cu interlayer of 17 nm or a Cr interlayer of 5 nm doubled the interfacial thermal conductance (ITC) compared to that of the pure Cr0.22Ni0.78/Al2O3 interface. In contrast, the Au interlayer reduces the ITC of the Cr0.22Ni0.78/Al2O3 interface. Furthermore, the phonon spectral analysis revealed that the Cu or Cr interlayer acts as a phonon bridge, alleviating the phonon mismatch between the Cr0.22Ni0.78 and Al2O3 layers. This study advances the understanding of the interlayer effects on the ITC of Cr0.22Ni0.78/Al2O3 interface and provides valuable guidance for improving the ITC between metal and dielectric materials in electronic applications.

Applied Physics LettersVol. 127(7)
Nanjing Normal University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 23%
Thermal properties of materials
1.04
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Improving the interfacial thermal conductance between Cr–Ni alloy and dielectric by a metal interlayer — Yunshan Zhao, Meilin Li, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS