Improvement of Electrical Properties of HfO2/Si0.73Ge0.27 Gate Stacks Through Selective Remote GeOx Scavenging

In this article, a selective remote GeOx scavenging method is presented to reduce interface trap density (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D<roman>it</roman>) in HfO<roman>2</roman>/Si<roman>0.73</roman>Ge<roman>0.27</roman> gate stacks using an Al-rich Al<roman>x</roman> O<roman>y</roman> cap as the scavenging layer. The GeOx scavenging process is driven by the formation energy gain between Al<roman>2</roman> O<roman>3</roman> and GeO<roman>2</roman> during postdeposition annealing (PDA). The Ni/HfO<roman>2</roman>/Si<roman>0.73</roman> Ge<roman>0.27</roman> metal-oxide semiconductor (MOS) capacitors subjected to the selective remote GeOx scavenging method demonstrate significant reductions in <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D<roman>it</roman>. Through the optimization of cap thickness and PDA temperature, a GeOx-free interfacial layer (IL) in the HfO<roman>2</roman>/Si<roman>0.73</roman> Ge<roman>0.27</roman> gate-stack has been successfully achieved. Notably, the Si<roman>0.73</roman> Ge<roman>0.27</roman> device with GeOx-free IL could achieve an excellent <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D<roman>it</roman> value of 1.3 × 10<roman>11</roman> eV-<roman>1</roman> cm-<roman>2</roman>.

Authors

Zhengyang Chen (ORCID: https://orcid.org/0009-0004-7340-4150)
Tomonori Nishimura (ORCID: https://orcid.org/0000-0002-8000-5164)
Choonghyun Lee (ORCID: https://orcid.org/0000-0001-9696-2308)
Yi Zhao (ORCID: https://orcid.org/0000-0001-5368-3595)
Yiran Lin (ORCID: https://orcid.org/0000-0001-7039-1228)

Institutions

The University of Tokyo (JP)
Zhejiang University (CN)

Publication Details

Journal: IEEE Transactions on Electron Devices
Published: 2025-08-20
DOI: https://doi.org/10.1109/ted.2025.3597578
Primary Topic: Semiconductor materials and devices
Type: article
Field-Weighted Citation Impact: 0.00

Funders

National Key Research and Development Program of China

Improvement of Electrical Properties of HfO<sub>2</sub>/Si<sub>0.73</sub>Ge<sub>0.27</sub> Gate Stacks Through Selective Remote GeO<sub>x</sub> Scavenging

Authors

Institutions

Publication Details

Funders

Improvement of Electrical Properties of HfO₂/Si_0.73Ge_0.27 Gate Stacks Through Selective Remote GeO_x Scavenging

Improvement of Electrical Properties of HfO₂/Si_0.73Ge_0.27 Gate Stacks Through Selective Remote GeO_x Scavenging

Abstract

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