Mole Fraction Dependent Passive Voltage Amplification in FE-DE Heterostructure
This paper explores ferroelectric–dielectric heterostructures comprising a ferroelectric oxide (Lead Zirconium Titanate (PbZr1−xTix O3)) with a varying mole fraction and a fixed dielectric oxide (Silicon dioxide (SiO2)). The study aims to enhance capacitance, optimize voltage amplification, and achieve stable negative capacitance. An isolated ferroelectric capacitor is examined by varying mole fractions of ferroelectric oxide. The negative capacitance in isolated ferroelectric capacitor is highly unstable in nature. The instability problem is fixed and the overall capacitance of the heterostructure is raised while the negative capacitance is stabilized by connecting a dielectric oxide in series with the ferroelectric capacitor. PbZr1−xTix O3 is utilized as the ferroelectric oxide, with mole fractions x=0,0.2,0.4,0.6,0.8,1.0. Among the investigated mole fractions, ferroelectric oxide with x=0.6 offers the maximum voltage amplification and improved capacitance because its capacitance closely matches the dielectric capacitance. Also, dynamic response and temperature analysis of heterostructure are studied further.
Authors
- Bhaskar Awadhiya (ORCID: https://orcid.org/0000-0002-4784-6172)
- P. Suresh (ORCID: https://orcid.org/0000-0001-6251-8102)
- Yashwanth Nanjappa (ORCID: https://orcid.org/0000-0002-4063-0790)
- Vikash Mishra (ORCID: https://orcid.org/0000-0002-2089-8415)
- Sachin Agrawal (ORCID: https://orcid.org/0000-0002-5338-9932)
- A. R. Bhat
- A. Manjunatha
Institutions
- Manipal Academy of Higher Education (IN)
- National Institute of Technology Delhi (IN)
Publication Details
- Journal
- Electronic Materials
- Published
- 2025-08-20
- DOI
- https://doi.org/10.3390/electronicmat6030011
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00