Machine learning for 2D material–based devices
Two-dimensional (2D) materials have emerged as a cornerstone for next-generation electronics, offering unprecedented opportunities for device miniaturization, energy-efficient computing, and novel functional applications. Their atomic-scale thickness, coupled with exceptional electrical, mechanical, and optical properties, makes them highly promising for applications ranging from ultra-scaled transistors to neuromorphic and quantum devices. However, optimizing these materials for device fabrication remains a complex and resource-intensive challenge due to the vast parameter space involved in their synthesis, processing, and integration. Machine learning (ML), a pivotal aspect of artificial intelligence (AI), has emerged as a powerful tool to accelerate the development of 2D material–based electronics by extracting insights from large experimental datasets and automating decision-making in high-throughput experimentation. This review highlights the critical role of ML in advancing 2D material research, focusing on growth optimization through material selection and morphology control, characterization for quality assessment, and device design through fabrication parameter optimization and performance prediction. This work aims to provide a comprehensive overview of the synergistic relationship between ML and 2D materials, outlining current advancements, challenges, and future prospects in AI-assisted material and device engineering. • Machine learning significantly enhances the efficiency and quality of 2D material synthesis. • Integrating machine learning with characterization techniques improves accuracy in defect and property analysis. • Data-driven models optimize fabrication parameters and predict the performance of 2D devices. • Machine learning drives interdisciplinary advancements from fundamental research to applications in 2D materials.
Authors
- Xiangliang Zhang (ORCID: https://orcid.org/0000-0002-3574-5665)
- Yi Wan (ORCID: https://orcid.org/0000-0002-6202-4193)
- Rongyu Lin (ORCID: https://orcid.org/0000-0001-5780-2838)
- Shichao Pei (ORCID: https://orcid.org/0000-0002-0802-1506)
- Xixiang Zhang (ORCID: https://orcid.org/0000-0002-3478-6414)
- K. Reed
- Yuan Yan (ORCID: https://orcid.org/0000-0002-8987-813X)
- Yinchang Ma (ORCID: https://orcid.org/0000-0002-5201-6448)
- Zhenwen Liang (ORCID: https://orcid.org/0000-0003-1080-3408)
- Yuqi Yang (ORCID: https://orcid.org/0009-0006-1826-1745)
Institutions
- University of Notre Dame (US)
- Clark University (US)
- The University of Melbourne (AU)
- National University of Singapore (SG)
- University of Massachusetts Boston (US)
- Quinnipiac University (US)
- King Abdullah University of Science and Technology (SA)
Publication Details
- Journal
- Materials Science and Engineering R Reports
- Published
- 2025-08-20
- DOI
- https://doi.org/10.1016/j.mser.2025.101085
- Citations
- 3
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.19