Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors
More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits. Among these devices, ISFET transistors—Ion-Sensitive Field-Effect Transistors—have the capacity of integrating ion-sensitive layers together with field effect transistors of ultimate generations. Recent studies have indicated that nanoporous materials deposited or grown within the transistor gate space offer a dual advantage—a favorable environment for an optimal capture of liquid state receptors through capillary effects, but also of direct anchoring of these nanoporous structures on a Si wafer. This article aims to review the constructive evolutions of ISFET transistors, along with some newer nanowire devices, as well as their co-integration techniques with nanoporous materials, which are beneficial in the optimization of many chemosensors but of enzymatic biosensors in particular.
Authors
- E. Manea (ORCID: https://orcid.org/0000-0002-9365-4710)
- Cristian Ravariu (ORCID: https://orcid.org/0000-0002-1483-2583)
- Cătălin Pârvulescu (ORCID: https://orcid.org/0000-0001-8570-0089)
- Gabriel Dima (ORCID: https://orcid.org/0000-0003-3710-1334)
Institutions
- National Institute for Research and Development in Microtechnologies (RO)
- Universitatea Națională de Știință și Tehnologie Politehnica București (RO)
Publication Details
- Journal
- Chemosensors
- Published
- 2025-08-20
- DOI
- https://doi.org/10.3390/chemosensors13080316
- Primary Topic
- Anodic Oxide Films and Nanostructures
- Type
- article
- Field-Weighted Citation Impact
- 0.00