Lewis Acid-Catalyzed Condensation for Facile Synthesis of Quinoidal 2-(5-Methylenethiazol-2(5<i>H</i>)-ylidene)malononitrile End-Capped Shortwave Infrared Organic Semiconductors
The facile synthesis of ultranarrow-bandgap (<1 eV) small-molecule semiconductors remains a persistent challenge for advancing shortwave infrared (SWIR) organic optoelectronic technologies. Donor-acceptor (D-A)-type molecules featuring quinoidal 2-(5-methylenethiazol-2(5<i>H</i>)-ylidene)malononitrile (TM) end-groups are promising for achieving this goal. However, despite extensive studies of TM-based asymmetric merocyanine dyes, their optoelectronic performances remain far from satisfactory, and the synthetic methodologies for symmetric TM-end-capped molecules remain largely unexplored. Here, we present a Lewis acid (LA)-catalyzed condensation strategy for synthesizing symmetrical TM-based molecules, overcoming the high activation energy and side reactions plaguing the conventional method. This strategy enables room-temperature construction of ADA and ADA'DA structures with high isolated yields up to 82%. Multiple SWIR absorbing materials with tunable energy levels, bandgaps, and fluorescence characteristics are constructed through systematic TM's substituent engineering. By leveraging noncovalent O-H or N-H conformational locks provided by heteroaryl substituents on TM, ultranarrow-bandgap TM-based materials down to 0.83 eV in the film state are obtained. Bulk-heterojunction (BHJ) photodetectors are fabricated using an ADA'DA-type molecule as an electron acceptor. The devices exhibit broadband response (400-1100 nm), high external quantum efficiency (EQE) (>40%), and noise-limited detectivity (<i>D</i>*) exceeding 1 × 10<sup>13</sup> Jones at 1020 nm, alongside a large linear dynamic range (LDR) (118 dB) and fast response (26 kHz at -3 dB). This work establishes TM-based materials as competitive candidates for silicon-rivaled photodetection and highlights the untapped potential of quinoidal TM moieties in designing next-generation organic materials for SWIR-based technologies.
Authors
- Yi Han (ORCID: https://orcid.org/0000-0001-5000-8818)
- H.W. Zhang (ORCID: https://orcid.org/0009-0006-7834-4390)
- Yunhong Huang (ORCID: https://orcid.org/0000-0002-5799-1357)
- Chunyan Chi (ORCID: https://orcid.org/0000-0003-4677-3546)
- Huiling Tai (ORCID: https://orcid.org/0000-0001-5966-3843)
- Yang Wang (ORCID: https://orcid.org/0000-0001-5057-1870)
- Jing Wei (ORCID: https://orcid.org/0000-0001-8486-7581)
- Jingcheng Li (ORCID: https://orcid.org/0000-0001-5099-5411)
- Yadong Jiang (ORCID: https://orcid.org/0000-0002-2777-8758)
- Yuan Liu (ORCID: https://orcid.org/0009-0004-0619-3234)
- Jiaqi Wang (ORCID: https://orcid.org/0009-0008-0282-6902)
Institutions
- University of Electronic Science and Technology of China (CN)
- National University of Singapore (SG)
- Université Bourgogne Franche-Comté (FR)
- National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
- State Key Laboratory of Electronic Thin Films and Integrated Devices
Publication Details
- Journal
- Journal of the American Chemical Society
- Published
- 2025-08-20
- DOI
- https://doi.org/10.1021/jacs.5c08423
- Citations
- 5
- Primary Topic
- Luminescence and Fluorescent Materials
- Type
- article
- Field-Weighted Citation Impact
- 2.59
Funders
- Ministry of Education - Singapore
- National Natural Science Foundation of China
- National Science Fund for Distinguished Young Scholars