Dosimetric characterization of a p-n silicon carbide detector under 320 kV X-ray irradiation

Abstract This work presents the comprehensive dosimetric characterization of a p-n silicon carbide (SiC) detector exposed to a 320 kV p X-ray beam, with the aim of evaluating its potential for preclinical and translational medical applications. The detector, based on a 10 μm thick 4H-SiC epitaxial layer, was assessed in terms of linearity with absorbed dose, dose rate dependence, percentage depth dose (PDD) distribution, response variation with field size, and short- and long-term reproducibility. Results demonstrated a highly linear dose-response relationship and negligible dose-rate dependence over the investigated range. The SiC device exhibited a consistent performance across different field sizes and penetration depths, highlighting its suitability for accurate dosimetry under medium-energy X-ray irradiation. Given its wide bandgap, low leakage current, high radiation tolerance, and near-tissue equivalence, the characterized SiC detector appears as a promising alternative to conventional dosimetric systems for radiobiological experiments and preclinical quality assurance in intermediate energy photon beams.