Measurement of 620nm Red AlGaInP-Based Micro-LED Arrays with All Treatment Properties

The AlGaInP-based micro-LED arrays with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10 * 10$</tex> pixels in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$13 * 20 \mu m^{2}$</tex> size which achieved enhancement with surface treatment, light improvement with surface roughness, and better electrical properties with passivation were fabricated and analyzed in our works.

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Published
2025-06-29
DOI
https://doi.org/10.23919/oecc/psc62146.2025.11111462
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Measurement of 620nm Red AlGaInP-Based Micro-LED Arrays with All Treatment Properties

Ming-June Wu, Yi‐Tzu Tseng, Zhi-An Lin, Natchanon Prechatavanich et al.
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GaN-based semiconductor devices and materials
article

Measurement of 620nm Red AlGaInP-Based Micro-LED Arrays with All Treatment Properties

Ming-June Wu, Yi‐Tzu Tseng, Zhi-An Lin, Natchanon Prechatavanich, Theeradech Sutheebanjerd, Chao-Hsin Wu, Yee Chee Keong -
article en

Abstract

The AlGaInP-based micro-LED arrays with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10 * 10$</tex> pixels in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$13 * 20 \mu m^{2}$</tex> size which achieved enhancement with surface treatment, light improvement with surface roughness, and better electrical properties with passivation were fabricated and analyzed in our works.

National Taiwan University (TW)
National Taiwan University
Openalex Percentile: Top 87%
GaN-based semiconductor devices and materials
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