Various Types of Hybrid SOAs Using InP/SOI Chip-on-Wafer Bonding Technology Towards Large Scale Photonic Integrated Circuits
III-V/Si hybrid SOAs with different epitaxial structures are monolithically integrated on an SOI wafer, using chip-on-wafer direct bonding process. The control of gain characteristics through the design of the optical confinement to the active layer in the III-V/Si hybrid structure is demonstrated.
Authors
- Nobuhiko Nishiyama (ORCID: https://orcid.org/0000-0001-8288-6690)
- Yuhki Itoh (ORCID: https://orcid.org/0000-0001-6271-2263)
- Naoko Inoue (ORCID: https://orcid.org/0000-0001-8396-2421)
- Takuya Okimoto (ORCID: https://orcid.org/0000-0001-5230-2770)
- Takuya Mitarai
- Hideki Yagi (ORCID: https://orcid.org/0000-0003-0961-7077)
- Yuji Koyama (ORCID: https://orcid.org/0009-0008-9043-1352)
- Naoki Fujiwara (ORCID: https://orcid.org/0000-0003-2858-6878)
- Kento Komatsu (ORCID: https://orcid.org/0000-0001-7818-5461)
- Hidenari Fujikata
- Takuo Hiratani (ORCID: https://orcid.org/0000-0002-7269-6057)
- Ryuya Sasaki
- Tsukuru Katsuyama
- Takehiko Kikuchii
Institutions
- Tokyo Institute of Technology (JP)
- Photonics Electronics Technology Research Association (JP)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11110392
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00