Large Bandwidth Fluorescence Spectrum in Situ Sensing Chip Based on Antisymmetric AWG Design

An on-chip spectrometer with 160nm bandwidth, 10nm interval, and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.4\text{mm}^{*}0.5 \text{mm}$</tex> area was fabricated by designing an anti symmetric AWG (Array Waveguide Grating) structure on the silicon nitride platform. The wideband fluorescence spectral signal in the waveguide could be separated by the spectrometer, and the fluorescence spectral signal in the sensing process could be detected in real-time. Finally, excitation and collection of fluorescent materials and in situ sensing of fluorescence spectra can be realized only by single-layer structure on passive silicon nitride chips, which greatly expands the application of fluorescent materials on chips.

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Publication Details

Published
2025-06-29
DOI
https://doi.org/10.1109/transducers61432.2025.11110807
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Large Bandwidth Fluorescence Spectrum in Situ Sensing Chip Based on Antisymmetric AWG Design

Huizi Li, Yanyan Fu, He Li, Huan Liu et al.
Semiconductor Lasers and Optical Devices
article

Large Bandwidth Fluorescence Spectrum in Situ Sensing Chip Based on Antisymmetric AWG Design

Huizi Li, Yanyan Fu, He Li, Huan Liu, Chang Chen, Jiangong Cheng, Bo Wang, Yaorong Xiahou
article en

Abstract

An on-chip spectrometer with 160nm bandwidth, 10nm interval, and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.4\text{mm}^{*}0.5 \text{mm}$</tex> area was fabricated by designing an anti symmetric AWG (Array Waveguide Grating) structure on the silicon nitride platform. The wideband fluorescence spectral signal in the waveguide could be separated by the spectrometer, and the fluorescence spectral signal in the sensing process could be detected in real-time. Finally, excitation and collection of fluorescent materials and in situ sensing of fluorescence spectra can be realized only by single-layer structure on passive silicon nitride chips, which greatly expands the application of fluorescent materials on chips.

Shanghai Institute of Microsystem and Information Technology (CN)
Openalex Percentile: Top 80%
Semiconductor Lasers and Optical Devices
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Large Bandwidth Fluorescence Spectrum in Situ Sensing Chip Based on Antisymmetric AWG Design — Huizi Li, Yanyan Fu, et al. · (2025) | TGRS Research Map | TGRS