TFLN Devices for Next Generation IMDD and Coherent in AI-DC

We review recent advances for thin-film lithium niobate (TFLN) photonic integrated devices with ultra-wide bandwidth, low insertion loss and low driving voltage, and we discuss their applications in next generation IMDD and coherent in AI-DC.

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Publication Details

Published
2025-06-29
DOI
https://doi.org/10.23919/oecc/psc62146.2025.11110695
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

TFLN Devices for Next Generation IMDD and Coherent in AI-DC

Xinlun Cai
Advancements in Semiconductor Devices and Circuit Design
article

TFLN Devices for Next Generation IMDD and Coherent in AI-DC

Xinlun Cai
article en

Abstract

We review recent advances for thin-film lithium niobate (TFLN) photonic integrated devices with ultra-wide bandwidth, low insertion loss and low driving voltage, and we discuss their applications in next generation IMDD and coherent in AI-DC.

Sun Yat-sen University (CN)
Affordable and clean energy
Openalex Percentile: Top 80%
Advancements in Semiconductor Devices and Circuit Design
DOISourceOpenAlex
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TFLN Devices for Next Generation IMDD and Coherent in AI-DC — Xinlun Cai · (2025) | TGRS Research Map | TGRS