Surface-Illuminated Near-Infrared Ge Photodetector on Si-On-Quartz Substrate With Extended Operating Wavelength
Surface-illuminated near-infrared photodetectors of a strain-enhanced Ge thin film on a Sion-quartz wafer exhibit a high responsivity of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$>0.1 ~\mathrm{A} / \mathrm{W}$</tex> not only in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$C$</tex> band but also in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L$</tex> band.
Authors
- Yasuhiko Ishikawa (ORCID: https://orcid.org/0000-0002-1361-9131)
- Reo Ogura
- Jose A. Piedra-Lorenzana
- Takeshi Hizawa
- Toshimasa Umezawa (ORCID: https://orcid.org/0000-0002-9768-3981)
- Kouichi Akahane (ORCID: https://orcid.org/0000-0002-8919-1717)
- Naoki Hamada (ORCID: https://orcid.org/0000-0001-9769-7999)
- Naokatsu Yamamoto (ORCID: https://orcid.org/0009-0005-4073-1355)
- Koji Abe
- Yuki Yoshino
Institutions
- Toyohashi University of Technology (JP)
- National Institute of Information and Communications Technology (JP)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111663
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Japan Society for the Promotion of Science