A Novel On-Wafer Method for Beam Spot Intensity Distribution Characterization in Electron Beam Lithography Process

This paper presents an electron beam spot intensity distribution characterization method using suspended-nanomembrane-based spot measurement wafers, standard test patterns and a model for exposure results. For the first time, primary beam spot intensity distributions at varying beam currents are characterized, minimizing scattering interference. This approach enables standardized on-wafer monitoring for electron beam lithography (EBL) process and promotes proximity effect correction (PEC) by providing fundamental modeling inputs, thus facilitating the application of EBL in NEMS research involving new materials and structures.