Fabricaton of Through-Silicon-Via Inductors for High-Frequency Vertical Power Delivery

This paper presents the fabrication of through-silicon-via (TSV) inductors for high-frequency vertical power delivery. To fabricate such inductors, magnetic material is introduced into TSVs by electrodepositing magnetic film onto the TSV sidewalls. A self-aligned process defines the electrodeposited magnetic film to form the cores of the TSV inductors without requiring photolithography. Subsequent copper filling of the vias provides a low-resistance vertical current path, completing the inductor structure. Compared to conventional on-silicon inductors, the TSV inductor efficiently utilizes footprint area, enabling higher inductance density and reduced resistance.