A Method for In-Situ On-Wafer Compression Test of Microbeams

This paper presents an innovative in-situ on-wafer compression test method capable of critical buckling stress extraction and process quality evaluation. Compression tests are conducted directly on on-wafer specimens independent of external precision instruments, feasible for characterizing process-related mechanical properties of microstructures and evaluating etching quality. Applying this method to two production lines with distinct process flows, the extracted critical buckling stresses of silicon beams can significantly reflect the differences in process quality. Production line 2 exhibits less linewidth loss and better etching uniformity than production line 1. This method is compatible with various MEMS fabrication processes, and holds potential for assessing process quality in MEMS mass production.