Highly Preferred Oriented Ternary Relaxor PB(MN, NB) O3-PB(ZR, TI)O3 Thin Films on Si Subsrate

One of the critical challenges in the development of high-performance piezoelectric micromachined sensors is the fabrication of high-quality sensing thin films. In this study, High-quality ternary <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.2\text{Pb }(\text{Mn}_{1/3}\text{Nb}_{2/3})\mathrm{O}_{3^{-}} 0.8\text{Pb }(\text{Zr}_{0.48}\text{Ti}0.52)\mathrm{O}_{3}(\text{PMnN}-\text{PZT})$</tex> thin films were prepared on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Pt}/\text{Ti}/\text{SiO}_{2}/\text{Si}$</tex> substrates and dense morphology and remarkable dielectric, ferroelectric, piezoelectric properties were obtained. Under optimized processing temperature of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$700^{\circ}\mathrm{C}$</tex>, the remnant polarization of the films reached <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$38.24 \mu \text{C cm}^{-2}$</tex> and exhibited dielectric constant of 1460 and low loss tano of 0.03. Piezoresponse force microscopy revealed an obvious domain reversal under in situ electric field with “butterfly” shape local piezoelectric response with piezoelectric coefficient <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$d_{33}^{*}$</tex> of 75.8 pm <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}^{-1}$</tex> was obtained. The superior global performance makes the present PMnN-PZT thin film quite favorable for piezoelectric MEMS devices applications.