Inp/Si Heterogeneously Integrated p-i-n Type Mach-Zehnder Modulator by Utilizing Chip-on-Wafer Bonding Method
We demonstrate an InP/Si heterogeneously integrated p-i-n type Mach-Zehnder modulator by using chip-on-wafer bonding method. The phase modulation efficiency is lower than <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.0 ~\mathrm{V} \pi \cdot ~\text{cm}$</tex>. The electrical/optical 3 dB bandwidth is as high as 67.5 GHz.
Authors
- Takuya Mitarai
- Nobuhiko Nishiyama (ORCID: https://orcid.org/0000-0001-8288-6690)
- Naoko Inoue (ORCID: https://orcid.org/0000-0001-8396-2421)
- Takehiko Kikuchi
- Hajime Tanaka (ORCID: https://orcid.org/0000-0001-9728-5687)
- Hideki Yagi (ORCID: https://orcid.org/0000-0003-0961-7077)
- Shun Kimura (ORCID: https://orcid.org/0000-0002-3481-2301)
- Taichi Misawa
- Naoki Fujiwara (ORCID: https://orcid.org/0000-0003-2858-6878)
- Kento Komatsu (ORCID: https://orcid.org/0000-0001-7818-5461)
- Naotaka Kasuya (ORCID: https://orcid.org/0000-0002-8574-0969)
Institutions
- Sumitomo Electric Industries (United States) (US)
- Photonics Electronics Technology Research Association (JP)
- Sumitomo Electric Industries (Japan) (JP)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11109814
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00