Thermal Conductivity Measurement of Two-Dimensional Heterostructures by Time Differential Raman Technique

2D materials possess high electrical conductivity and field-effect mobility, enabling fast switching and low power consumption, which makes them ideal for field effect transistor (FET) applications. As device integration intensifies, accurate thermal conductivity measurements become essential for efficient thermal management. In this study, a time differential Raman technique is developed to quantify the thermal conductivities of both monolayer transition metal dichalcogenides (TMDs) and their heterostructures. By constructing two energy transport states in the time domain and employing normalized parameters, the method effectively eliminates uncertainties arising from temperature calibration and laser absorption. The measurement results fall within a reasonable range, confirming the method's feasibility, and the impact of temperature on thermal conductivity is further explored using this approach.