Beyond 100 GHz, High Responsivity, Waveguide-Coupled Deeply Recessed Germanium on Silicon Photodiode

In this work, we report a waveguide deeply recessed Ge/Si photodiode achieving a 3-dB bandwidth of 106 GHz at −2 V along with a high O -band responsivity value of 0.93 A/W.

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Publication Details

Published
2025-06-29
DOI
https://doi.org/10.23919/oecc/psc62146.2025.11111517
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73

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article

Beyond 100 GHz, High Responsivity, Waveguide-Coupled Deeply Recessed Germanium on Silicon Photodiode

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Photonic and Optical Devices
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Beyond 100 GHz, High Responsivity, Waveguide-Coupled Deeply Recessed Germanium on Silicon Photodiode

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article en
1 citations

Abstract

In this work, we report a waveguide deeply recessed Ge/Si photodiode achieving a 3-dB bandwidth of 106 GHz at −2 V along with a high O -band responsivity value of 0.93 A/W.

IMEC (BE)
Key Digital Technologies Joint Undertaking, European Commission, Horizon 2020 Framework Programme
Affordable and clean energy
Openalex Percentile: Top 25%
Photonic and Optical Devices
0.73
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Beyond 100 GHz, High Responsivity, Waveguide-Coupled Deeply Recessed Germanium on Silicon Photodiode — Roger Loo, Maumita Chakrabarti, et al. · (2025) | TGRS Research Map | TGRS