NN-IGBM: A Full-Physics Raman Numerical Solution Solving Framework Initialized by Neural Network

We propose a full-physics solver framework for Raman amplifiers with third-order pumps. Simulations demonstrate that it improves the convergence rate to 98.37 % and simulation speed by 19.85 times on average over 10,000 simulation cases.

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Publication Details

Published
2025-06-29
DOI
https://doi.org/10.23919/oecc/psc62146.2025.11110726
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

NN-IGBM: A Full-Physics Raman Numerical Solution Solving Framework Initialized by Neural Network

Lilin Yi, Weisheng Hu, Qunbi Zhuge, Xiaomin Liu et al.
Thin-Film Transistor Technologies
article

NN-IGBM: A Full-Physics Raman Numerical Solution Solving Framework Initialized by Neural Network

Lilin Yi, Weisheng Hu, Qunbi Zhuge, Xiaomin Liu, Yicheng Xu, Zihang Wang, Yihao Zhang
article en

Abstract

We propose a full-physics solver framework for Raman amplifiers with third-order pumps. Simulations demonstrate that it improves the convergence rate to 98.37 % and simulation speed by 19.85 times on average over 10,000 simulation cases.

Shanghai Jiao Tong University (CN)
National Natural Science Foundation of China, Shanghai Jiao Tong University
Openalex Percentile: Top 80%
Thin-Film Transistor Technologies
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