3-dB Bandwidth Enlargement of an InGaAs Photodiode by Inductive Signal Electrode
Four types of backside-illuminated InGaAs photodiodes, all with a mesa diameter of 10 μm but differing in the width and length of the CPW signal electrode, were fabricated. The fabricated photodiodes exhibited a responsivity of 0.66 A/W. Additionally, a 3-dB bandwidth exceeding 67 GHz was achieved for the photodiodes with a 5 μm-wide and 313 or 513 μm-long signal electrode owing to the inductive peaking.
Authors
- Shinmo An (ORCID: https://orcid.org/0000-0003-0925-9011)
- Duk‐Jun Kim
- Donghun Lee (ORCID: https://orcid.org/0000-0003-2141-6761)
- Young-Tak Han (ORCID: https://orcid.org/0000-0003-1132-2913)
- Seok-Jun Yun
Institutions
- Electronics and Telecommunications Research Institute (KR)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111335
- Citations
- 1
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73