Optoelectric Properties of AlGaInP-Based 620 nm Micro-LED at Cryogenic Temperature
This study investigates the optoelectric properties of AlGaInP-based micro-LED from 300 K to 80 K. Results show temperature-dependent emission shifts, reduced forward currents at low temperature, and increased peak efficiency, though efficiency droop becomes severe at 80 K, providing insights into cryogenic micro-LED applications.
Authors
- Ming-June Wu
- Yi‐Tzu Tseng
- Chao‐Hsin Wu (ORCID: https://orcid.org/0000-0001-7849-773X)
- Conway Yee (ORCID: https://orcid.org/0000-0002-6091-3405)
- Zhi-An Lin
- Natchanon Prechatavanich (ORCID: https://orcid.org/0009-0003-9737-2635)
- Theeradech Sutheebanjerd
Institutions
- National Taiwan University (TW)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11109749
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00