Photon-Trapping Type Photodetector for High-Sensitivity and High-Speed Communication
Photon-trapping structures with periodic micro-hole arrays can enhance the sensitivity of surface-illuminated InP/InGaAs pin photodetectors in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.55 \mu ~\mathrm{m}$</tex> band, despite a thin absorbing layer for high-speed operation, as shown by FDTD simulations.
Authors
- Shun Harada
- Toshimasa Umezawa (ORCID: https://orcid.org/0000-0002-9768-3981)
- Tetsuya Kawanishi (ORCID: https://orcid.org/0000-0001-9724-8878)
- Kouichi Akahane (ORCID: https://orcid.org/0000-0002-8919-1717)
Institutions
- Waseda University (JP)
- National Institute of Information and Communications Technology (JP)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11110826
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00