Fully Automatic Evaluation of IGZO-TFT Model Parameters

This paper presents a fully automatic modeling and parameter extraction strategy for the above-threshold and sub-threshold characteristics of Indium Gallium Zinc Oxide (IGZO) thin-film transistors (TFTs) in both linear and saturation regions of operation. A semi-physical analytical description of the current-voltage characteristics, which is captured using a single unified expression applicable to both operational regions is considered. The results obtained with the proposed methodology were compared to experimental data and a relative error below 10% is obtained for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\mathrm{G}\mathrm{S}}\geq 1\mathrm{V}$</tex> in saturation and in linear regimes.