EML Assembled with Flip-Chip Technology on AlN Sub-Mount Operating at 212.5 Gbps PAM4

We reported a high-performance EML integrated using flip-chip technology on an AlN submount. It is capable of high-speed modulation, demonstrating 3dB bandwidth at 66.4 GHz and low TDECQ values of 1.8 dB for 106 GBaud-PAM4.

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Publication Details

Published
2025-06-29
DOI
https://doi.org/10.23919/oecc/psc62146.2025.11110318
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.73
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article

EML Assembled with Flip-Chip Technology on AlN Sub-Mount Operating at 212.5 Gbps PAM4

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1 citations
Radio Frequency Integrated Circuit Design
0.73
article

EML Assembled with Flip-Chip Technology on AlN Sub-Mount Operating at 212.5 Gbps PAM4

Asami Uchiyama, Mizuki Shirao, Yoshikazu Yoneda, Kei Masuyama, Nobuo Ohata, Chikara Watatani, Kenichi Abe, Takuma Fujita, Shunto Katsumi
article en
1 citations

Abstract

We reported a high-performance EML integrated using flip-chip technology on an AlN submount. It is capable of high-speed modulation, demonstrating 3dB bandwidth at 66.4 GHz and low TDECQ values of 1.8 dB for 106 GBaud-PAM4.

Mitsubishi Electric (Germany) (DE), Mitsubishi Electric (Japan) (JP)
Affordable and clean energy
Openalex Percentile: Top 25%
Radio Frequency Integrated Circuit Design
0.73
DOISourceOpenAlex
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