Investigation of Layers and Quantum Wells of GaAsBi with Embedded Bi Quantum Dots for Applications in NIR LEDs
This work is focused to the investigation of LED containing GaAsBi quantum dots embedded in a layer or parabolic quantum well formed in-situ in MBE reactor using segregation process as an alternative method.
Authors
- Bronislovas Čechavičius (ORCID: https://orcid.org/0000-0002-7119-7213)
- Renata Butkutė (ORCID: https://orcid.org/0000-0002-1682-056X)
- Aurimas Čerškus (ORCID: https://orcid.org/0000-0001-8439-5115)
- Martynas Skapas (ORCID: https://orcid.org/0000-0002-6152-4612)
- A. Vaitkevičius (ORCID: https://orcid.org/0000-0003-3625-198X)
- Evelina Dudutienė (ORCID: https://orcid.org/0000-0003-1097-8531)
- Andrea Zelioli (ORCID: https://orcid.org/0000-0001-6829-3549)
- Andrius Bičiūnas (ORCID: https://orcid.org/0000-0001-9456-9027)
- Aivaras Špokas (ORCID: https://orcid.org/0009-0009-9289-0285)
Institutions
- Center for Physical Sciences and Technology (LT)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111160
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Lietuvos Mokslo Taryba