Observation of Nonvolatile Phase Shift in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Waveguide Fabricated by Digitally Processed DC Sputtering
A 300 nm Hf<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>Zr<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) film was synthesized without heating, exhibiting ferroelectricity. HZO buried optical waveguides had a high confinement factor resulting in a one-time nonvolatile phase shift even at low electric fields.
Authors
- Yudai Katsura
- Yuki Takamatsu (ORCID: https://orcid.org/0000-0001-7967-1576)
- Hideo Isshiki (ORCID: https://orcid.org/0000-0003-0009-7941)
- Satoshi Fujiya
Institutions
- University of Electro-Communications (JP)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11109922
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00