Telecom C-Band Single-Photon Emission from InAs Quantum Dots in InAlGaAs/InP Matrix
High-purity single photon emitter at 1550 nm has been demonstrated with InAs quantum dots embedded in InAlGaAs lattice-matched to InP. The lowest <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$g^{2}(0) \sim 0.009$</tex> has been achieved with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu$</tex> mpillars on the as-grown sample.
Authors
- Yen-Ju Lo
- Chien‐Ju Lee
- Chiao-Tzu Huang (ORCID: https://orcid.org/0000-0002-1396-4605)
- Val Zwiller
- Yi-Shan Lee (ORCID: https://orcid.org/0000-0002-0512-9503)
- Thi‐Hien Do
- Chu-Chun Wu
- Sheng-Di Lin
Institutions
- National Yang Ming Chiao Tung University (TW)
- National Tsing Hua University (TW)
- Research Center for Applied Science, Academia Sinica (TW)
- KTH Royal Institute of Technology (SE)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111529
- Primary Topic
- Advanced Optical Sensing Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00