Electron Beam Spot Intensity Uniformity Detection System Based on Suspended NANO Photographic Plates

This paper introduces a method for characterizing electron beam spot intensity uniformity based on suspended nano photographic plates. For the first time, both the beam spot intensity uniformity and shot size are simultaneously extracted by a detection system at 1.25 nm resolution. This approach makes it possible to evaluate the process uniformity and efficiency on wafers, which is beneficial for key parameter extraction and optimizing exposure schemes in fabrication of NEMS.

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Publication Details

Published
2025-06-29
DOI
https://doi.org/10.1109/transducers61432.2025.11109245
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
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Electron Beam Spot Intensity Uniformity Detection System Based on Suspended NANO Photographic Plates

Yuan Sheng, Xuanqing Hua, Peng Liu, Dacheng Zhang et al.
Integrated Circuits and Semiconductor Failure Analysis
article

Electron Beam Spot Intensity Uniformity Detection System Based on Suspended NANO Photographic Plates

Yuan Sheng, Xuanqing Hua, Peng Liu, Dacheng Zhang, Jiawei Zhou, Fengjun Yu
article en

Abstract

This paper introduces a method for characterizing electron beam spot intensity uniformity based on suspended nano photographic plates. For the first time, both the beam spot intensity uniformity and shot size are simultaneously extracted by a detection system at 1.25 nm resolution. This approach makes it possible to evaluate the process uniformity and efficiency on wafers, which is beneficial for key parameter extraction and optimizing exposure schemes in fabrication of NEMS.

Peking University (CN)
Openalex Percentile: Top 80%
Integrated Circuits and Semiconductor Failure Analysis
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