Optimization of the Gain Region for Large Area InGaAs Based NIR VECSELs
This study optimizes the gain region of InGaAs-based Vertical-External-Cavity Surface-Emitting Laser for emission at 975nm to suppress lattice induced mismatch dislocations for large-area fabrication, enhancing device lifetime and performance.
Authors
- Bronislovas Čechavičius (ORCID: https://orcid.org/0000-0002-7119-7213)
- Renata Butkutė (ORCID: https://orcid.org/0000-0002-1682-056X)
- Sandra Stanionytė (ORCID: https://orcid.org/0000-0003-0018-5036)
- Martynas Talaikis (ORCID: https://orcid.org/0000-0003-3516-6425)
- Aurimas Čerškus (ORCID: https://orcid.org/0000-0001-8439-5115)
- A. Vaitkevičius (ORCID: https://orcid.org/0000-0003-3625-198X)
- Evelina Dudutienė (ORCID: https://orcid.org/0000-0003-1097-8531)
- Andrea Zelioli (ORCID: https://orcid.org/0000-0001-6829-3549)
- Kęstutis Mažeika (ORCID: https://orcid.org/0000-0003-4792-8650)
- Aivaras Špokas (ORCID: https://orcid.org/0009-0009-9289-0285)
Institutions
- Vilnius University (LT)
- Center for Physical Sciences and Technology (LT)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111471
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00